Applications of a Novel FIB-SIMS Instrument in SIMS Image Depth Profiling

Sputter Depth Profiling by SIMS; Calibration of SIMS Depth Scale Using Multi-layer Reference Materials

In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...

ToF-SIMS Depth Profiling of a Complex Polymeric Coating Employing a C60 Sputter Source

A complex poly(vinylidene difluoride) (PVdF)/poly(methyl methacrylate) (PMMA) based coil coating formulation has been investigated using time-of-flight SIMS (ToFSIMS). Employing a Bi3 + analysis source and a Buckminsterfullerene (C60) sputter source, depth profiles were obtained through the polymeric materials in the outer few nanometres of the PVdF topcoat. These investigations demonstrate tha...

Applications of TOF-SIMS in Planetology

In planetology the analysis of micrometer-sized samples like, e.g., inclusions in meteorites, interplanetary dust, and presolar grains has become more and more important. This requires techniques with high lateral resolution, no or little sample destruction, and high sensitivity. To still obtain unbiased information on this kind of samples a technique or a suite of techniques has to be selected...

Depth profiling of peptide films with TOF-SIMS and a C60 probe.

A buckminsterfullerene ion source is employed to characterize peptide-doped trehalose thin films. The experiments are designed to utilize the unique sputtering properties of cluster ion beams for molecular depth profiling. The results show that trehalose films with high uniformity can be prepared on Si by a spin-coating technique. Bombardment of the film with C60+ results in high quality time-o...

The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous silicon